This paper presents a one-dimensional analytical model for calculating Gate Capacitance in Gate-All-Around Carbon Nanotube Field Effect Transistor (GAA-CNFET) using electrostatic approach. The proposed model is inspired by the fact that quantum Capacitance appears for the Carbon Nanotube (CNT) which has a low density of states. The Gate Capacitance is a series combination of dielectric Capacitance and quantum Capacitance. The model so obtained depends on the density of states (DOS), surface potential of CNT, Gate voltage and diameter of CNT. The quantum Capacitance obtained using developed analytical model is 2.84 pF/cm for (19, 0) CNT, which is very close to the reported value 2.54 pF/cm. While, the Gate Capacitance comes out to be 24.3×10-2 pF/cm. Further, the effects of dielectric thickness and diameter of CNT on the Gate Capacitance are also analysed. It was found that as we reduce the thickness of dielectric layer, the Gate Capacitance increases very marginally which provides better Gate control upon the channel. The close match between the calculated and simulated results confirms the validity of the proposed model.

This paper presents a novel design and analysis of a Low-k Source side Asymmetrical Spacer Halo doped Nanowire TFET. The utilization of high-k hafnium oxide spacer materials in TFET enhance electrostatic control and minimize short-channel effects in nanoscale devices. However, the performance of dynamic circuits suffers with higher fringe Capacitance brought on by high-k spacers. Our method focuses on reducing Gate Capacitance by optimistic utilization of high-k spacer material. The proposed device is constructed in SILVACO TCAD software and results states that the use of Low-k material as silicon dioxide at the Source-side spacer in halo-doped nanowire TFET design results in significantly reduced Gate-Capacitance and intrinsic-delay. For this proposed TFET device, the circuit performance of advanced nanowire structure can improve drain current characteristics and analog characteristice.  The proposed device exhibits better performance as compared to other spacer engineering devices. As a consequence, the suggested device appears as a strong suitable device for low power digital applications.

Today more than ever, we need high-speed circuits with low occupancy and low power as an alternative to CMOS circuits. Therefore, we proposed a new path to build nanoscale circuits such as Quantum-dot Cellular Automata (QCA). This technology is always prone to failure due to its very small size. Therefore, designers always try to design fault-tolerant Gates and provide methods to increase the reliability of QCA. By adding redundant cells, the possibility of some defects such as cell omission and cell addition is somewhat reduced. However, in the face of defects such as stuck-at 0/1 faults, Clock fault and bridging fault. We can greatly increase the fault tolerance by appropriate placement and using fault tolerant Gates with a suitable structure. In this paper, we design the XOR/XNOR Gate with the approach of preventing stuck-at 0/1 fault, clock fault, and bridging fault using the first NNI Gate tolerating cell addition fault.

Water is one of the most vital constituents in plants. In this research, for an estimation of leaf moisture content, the variation of Capacitance was employed. The variations were measured via designed and manufactured capacitive sensors. The objective of the research was to estimate leaf moisture content by measuring its Capacitance for five agronomic crops. Experiments for measuring leaf Capacitance were performed on maize, sorghum, capsular bean, white bean and sunflower at two frequencies of: 100 kHz and 1 MHz. The results showed that in all cases the best fitted curve for variations of the Capacitance in relation to leaf moisture percentage was in the form of an exponential function namely: y= aebx (where y is Capacitance, x is leaf moisture content, a is the linear coefficient, and b is the exponential coefficient). Parameters a and b for different plants of each crop and each frequency were not significantly different at 1% probability level. However, these coefficients were significantly different among different crops. Coefficients of determination were higher at 100 kHz than at 1 MHz. It was also observed that the higher the leaf moisture the more the data points scattered around the best-fit line, although the scattering was more uniform at 1 MHz.